XeF2 Etching of Silicon

XeF2 etchining system is designed to expose samples to xenon difluoride gas (XeF2) in a cyclic mode in which the etch chamber is repeatedly filled with XeF2 gas and pumped out again. The main advantage of XeF2 etching system in comparism to other silicon etchants is in high selectivity to silicon with respect to aluminum, photoresist, and silicon dioxide. Since this technique etch silicon isotropic, large structures can be undercut.

Publications

Liu, X.; Fohlerová, Z.; Gablech, I.; Pumera, M.; Neužil, P., 2024: Nature-inspired parylene/SiO2 core-shell micro-nano pillars: Effect of topography and surface chemistry. APPLIED MATERIALS TODAY 37, doi: 10.1016/j.apmt.2024.102117 (RIE-FLUORINE, DRIE, PARYLENE-SCS, XEF2)

CHMELÍKOVÁ, L.; FECKO, P.; CHMELÍK, J.; SKÁCEL, J.; OTÁHAL, A.; FOHLEROVÁ, Z., 2023: Demolded hollow high aspect-ratio parylene-C micropillars for real-time mechanosensing applications. APPLIED MATERIALS TODAY, p. 1 - 12, doi: 10.1016/j.apmt.2023.101736 (DRIE, PARYLENE-SCS, SUSS-MA8, XEF2)

LIU, X.; FECKO, P.; FOHLEROVÁ, Z.; PEKÁREK, J.; KARÁSEK, T.; NEUŽIL, P., 2020: Parylene Micropillars Coated with Thermally Grown SiO2. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 (6), p. 38 - 6, doi: 10.1116/6.0000558 (SUSS-MA8, SUSS-RCD8, DWL, DRIE, RIE-FLUORINE, PARYLENE-SCS, XEF2, APCVD, LYRA)

Fecko, P., 2019: Gecko mimicking surfaces. MASTER'S THESIS, p. 1 - 52 (SUSS-RCD8, SUSS-MA8, DWL, DRIE, LYRA, ALD, RIE-FLUORINE, ICON-SPM, PARYLENE-SCS, XEF2)

GABLECH, I.; SOMER, J.; FOHLEROVÁ, Z.; SVATOŠ, V.; PEKÁREK, J.; KURDÍK, S.; FENG, J.; FECKO, P.; PODEŠVA, P.; HUBÁLEK, J.; NEUŽIL, P., 2018: Fabrication of buried microfluidic channels with observation windows using femtosecond laser photoablation and parylene-C coating. MICROFLUIDICS AND NANOFLUIDICS 22 (9), p. NA - 7, doi: 10.1007/s10404-018-2125-6 (DRIE, DWL, SUSS-MA8, PARYLENE-SCS, XEF2)

Specification

Methods

Isotropic Si etching

Details

Type of access
Full-service (paid), Self-service
Research area
Devices
Category
Dry etching
Guarantor
Prášek, Jan
Site
CEITECNANO
Location
CEITEC Nano - C1.20