Secondary Ion Mass Spectroscopy ION-TOF TOF.SIMS5
TOF-SIMS is an acronym for the combination of the analytical technique SIMS (Secondary Ion Mass Spectrometry) with Time-of-Flight mass analysis (TOF). The technique provides detailed elemental and molecular information about the surface, thin layers, interfaces of the sample, and gives a full three-dimensional analysis. For a TOF-SIMS analysis, a solid surface is bombarded by primary ions of some keV energy. The primary ion energy is transferred to target atoms via atomic collisions and a so-called collision cascade is generated. Part of the energy is transported back to the surface allowing surface atoms and molecular compounds to overcome the surface binding energy. The interaction of the collision cascade with surface molecules is soft enough to allow even large and non-volatile molecules with masses up to 10,000 u to escape without or with little fragmentation. Sputtering is achieved by a sputter beam of reactive species (O2 or Cs) at low energy for increased sensitivity, high depth resolution, and short transients. Analysis is performed by a short pulse length and small spot size ion beam for high mass and lateral resolution. By digitally scanning the bismuth analysis beam, high spatial resolution ion images of all secondary ions from the sample surface are produced. By sputtering the sample surface simultaneously by cesium or oxygen beam, images from increasing depth are obtained and hence three dimensional data are collected. The TOF.SIMS 5 is the latest generation of high-end TOF-SIMS instruments developed by IONTOF Company. Its design guarantees optimum performance in all fields of SIMS applications. The instruments offers three ion sources offering Bi1–7+, Cs+ and O2+ and is equipped with a reflectron TOF analyzer giving high secondary ion transmission with high mass resolution (up to 11,000), a sample chamber with a 5-axis manipulator (x, y, z, rotation and tilt) for flexible navigation, charge compensation for the analysis of insulators, a secondary electron detector for SEM imaging. Samples can be heated and cooled if analysis of volatiles is needed (-130°C to + 600°C with a precision of +/- 1°C). In a TOF-SIMS experiment the primary ion beam is pulsed to get good mass resolution. Consequently the current density and also the resulting erosion speed is very low (< 0.1nm/min). Therefore, depth profiling and 3D analysis with a TOF-SIMS instrument is done in the so-called dual beam mode. While the first beam (Cs+ or O2+) is sputtering a crater, the second beam (Bi1–7+ ) is progressively analyzing the crater bottom. The key advantage of the dual beam mode is the possibility to adjust the analysis and the sputter parameter independently, e. g. the combination of a low energy sputter beam of O2 or Cs to increase the yield of positively and negatively charged secondary ions, with a high-energy, well-focused beam of the Bi cluster source. The 30 keV Bi Nanoprobe cluster provides high data rates and an ultimate lateral resolution of down to 80 nm. This gun is also equipped with the BiMn cluster ion emitter providing also Mn ions for G-SIMS analysis. SIMS depth profiling of organic or inorganic samples may suffer from the formation of ion beamed induced surface roughening. This effect limits the achievable depth resolution and can also lead to different erosion rates. Sample roughening can effectively be avoided by using fast sample rotation during sputtering which is provided by special sample stage.
Publications
Kelarová, Š., 2023: Organosilicon coatings based on trimethylsilyl acetate monomer prepared using plasma of RF capacitively coupled glow discharge. PH.D. THESIS, p. 1 - 182 (WOOLLAM-MIR, FTIR, KRATOS-XPS, SIMS)
SALAMON, D.; BUKVIŠOVÁ, K.; JAN, V.; POTOČEK, M.; ČECHAL, J., 2023: Superflux of an organic adlayer towards its local reactive immobilization. COMMUNICATIONS CHEMISTRY 6 (1), doi: 10.1038/s42004-023-01020-2 (KRATOS-XPS, SIMS, LYRA)
Sen, HS.; Daghbouj, N.; Callisti, M.; Vronka, M.; Karlik, M.; Duchon, J.; Cech, J.; Lorincik, J.; Havranek, V.; Babor, P.; Polcar, T., 2022: Interface-Driven Strain in Heavy Ion-Irradiated Zr/Nb Nanoscale Metallic Multilayers: Validation of Distortion Modeling via Local Strain Mapping. ACS APPLIED MATERIALS & INTERFACES 14 (10), p. 12777 - 20, doi: 10.1021/acsami.1c22995 (SIMS)
UKRAINTSEV, E.; KROMKA, A.; JANSSEN, W.; HAENEN, K.; TAKEUCHI, D.; BÁBOR, P.; REZEK, B., 2021: Electron emission from H-terminated diamond enhanced by polypyrrole grafting. CARBON 176, p. 642 - 8, doi: 10.1016/j.carbon.2020.12.043 (SIMS, NANOSAM)
DAGHBOUJ, N.; CALLISTI, M.; SEN, H. S.; KARLIK, M.; ČECH, J.; VRONKA, M.; HAVRÁNEK, V.; ČAPEK, J.; MINÁRIK, P.; BÁBOR, P.; POLCAR, T., 2021: Interphase boundary layer-dominated strain mechanisms in Cu+ implanted Zr-Nb nanoscale multilayers. ACTA MATERIALIA 202, p. 317 - 14, doi: 10.1016/j.actamat.2020.10.072 (SIMS)
PAPEŽ, N.; DALLAEV, R.; KASPAR, P.; SOBOLA, D.; ŠKARVADA, P.; ŢĂLU, Ş.; RAMAZANOV, S.; NEBOJSA, A., 2021: Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination . MATERIALS 14 (2), p. 1 - 13, doi: 10.3390/ma14020461 (JAZ3-CHANNEL, KRATOS-XPS, SIMS)
VANĚK, T., HÁJEK, F., DOMINEC, F., HUBÁČEK, T., KULDOVÁ, K., PANGRÁC, J., KOŠUTOVÁ, T., KEJZLAR, P., BÁBOR, P., LACHOWSKI, A., HOSPODKOVÁ, A., 2021: Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms. JOURNAL OF CRYSTAL GROWTH 565, p. 126151 - 6, doi: 10.1016/j.jcrysgro.2021.126151 (SIMS)
Rejhon, M.; Brynza, M.; Grill, R.; Belas, E.; Kunc, J., 2021: Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy. PHYSICS LETTERS A 405, doi: 10.1016/j.physleta.2021.127433 (FTIR-CHEMLAB, SIMS)
Dallaev, R., 2021: Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods. VACUUM 193, doi: 10.1016/j.vacuum.2021.110533 (ALD, ICON-SPM, SIMS)
MACKOVÁ, A.; FERNANDES, S.; MATĚJÍČEK, J.; VILÉMOVÁ, M.; HOLÝ, V.; LIEDKE, M.O.; MARTAN, J.; VRONKA, M.; POTOČEK, M.; BÁBOR, P.; BUTTERLING, M.; ATTALLAH, A.G.; HIRSCHMANN, E.; WAGNER, A.; HAVRANEK, V., 2021: Radiation damage evolution in pure W and W-Cr-Hf alloy caused by 5 MeV Au ions in a broad range of dpa. NUCLEAR MATERIALS AND ENERGY 29, p. 101085-1 - 15, doi: 10.1016/j.nme.2021.101085 (SIMS)
Ramazanov, S.; Sobola, D.; Ţălu, Ş.; Orudzev, F.; Arman, A.; Kaspar, P.; Dallaev, R.; Ramazanov, G., 2021: Multiferroic behavior of the functionalized surface of a flexible substrate by deposition of Bi2O3 and Fe2O3. MICROSCOPY RESEARCH AND TECHNIQUE, p. 1 - 11, doi: 10.1002/jemt.23996 (LYRA, SIMS, KRATOS-XPS, VERIOS)
Liška, P., 2021: Optical characterization of advanced nanomaterials with a high lateral resolution. MASTER'S THESIS, p. 1 - 91 (NANOSAM, ICON-SPM, LYRA, TITAN, VERIOS, KRATOS-XPS, SIMS)
Papež, N.; Gajdoš, A.; Dallaev, R.; Sobola, D.; Sedlák, P.; Motúz, R.; Nebojsa, A.; Grmela, L., 2020: Performance analysis of GaAs based solar cells under gamma irradiation. APPLIED SURFACE SCIENCE 510, p. 145329-1 - 145329-8, doi: 10.1016/j.apsusc.2020.145329 (HELIOS, SIMS)
ŠETKA, M.; BAHOS, F.; MATATAGUI, D.; POTOČEK, M.; KRÁL, Z.; DRBOHLAVOVÁ, J.; GRÁCIA, I.; VALLEJOS VARGAS, S., 2020: Love wave sensors based on gold nanoparticle-modified polypyrrole and their properties to ammonia and ethylene. SENSORS AND ACTUATORS B: CHEMICAL 304, p. 1 - 10, doi: 10.1016/j.snb.2019.127337 (TITAN, SIMS, ICON-SPM, HELIOS)
UHLÍŘ, V.; PRESSACCO, F.; ARREGI URIBEETXEBARRIA, J.; PROCHÁZKA, P.; PRŮŠA, S.; POTOČEK, M.; ŠIKOLA, T.; ČECHAL, J.; BENDOUNAN, A.; SIROTTI, F., 2020: Single-layer graphene on epitaxial FeRh thin films. APPLIED SURFACE SCIENCE 514, p. 145923-1 - 7, doi: 10.1016/j.apsusc.2020.145923 (MAGNETRON, VERSALAB, RIGAKU9, SIMS)
SOBOLA, D.; RAMAZANOV, S.; KONEČNÝ, M.; ORUDZHEV, F.; KASPAR, P.; PAPEŽ, N.; KNÁPEK, A.; POTOČEK, M., 2020: Complementary SEM-AFM of Swelling Bi-Fe-O Film on HOPG Substrate. MATERIALS 13 (10), p. 1 - 15, doi: 10.3390/ma13102402 (KRATOS-XPS, SIMS, LYRA)
RAMAZANOV, S.; SOBOLA, D.; ORUDZHEV, F.; KNÁPEK, A.; POLČÁK, J.; POTOČEK, M.; KASPAR, P.; DALLAEV, R., 2020: Surface Modification and Enhancement of Ferromagnetism in BiFeO3 Nanofilms Deposited on HOPG. NANOMATERIALS 10 (10), p. 1990-1 - 17, doi: 10.3390/nano10101990 (HELIOS, SIMS, KRATOS-XPS)
Papez, N; Gajdos, A; Sobola, D; Dallaev, R; Macku, R; Skarvada, P; Grmela, L, 2020: Effect of gamma radiation on properties and performance of GaAs based solar cells. APPLIED SURFACE SCIENCE 527, p. 146766-1 - 146766-11, doi: 10.1016/j.apsusc.2020.146766 (LYRA, WOOLLAM-VIS, SIMS, FTIR)
Dallaev, R; Sobola, D; Tofel, P; Skvarenina, L; Sedlak, P, 2020: Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum. COATINGS, MDPI 10 (10), p. 954-1 - 954-14, doi: 10.3390/coatings10100954 (ICON-SPM, KRATOS-XPS, SIMS)
Číž, T., 2020: X-ray diffraction analysis of oxide layers. MASTER'S THESIS (KRATOS-XPS, WOOLLAM-VIS, RIGAKU9, UHV-PLD, SIMS)
HOLEŇÁK, R.; SPUSTA, T.; POTOČEK, M.; SALAMON, D.; ŠIKOLA, T.; BÁBOR, P., 2019: 3D localization of spinel (MgAl2O4) and sodium contamination in alumina by TOF-SIMS. MATERIALS CHARACTERIZATION 148, p. 252 - 7, doi: 10.1016/j.matchar.2018.12.019 (SIMS, VERIOS)
Kunc, J.; Rejhon, M.; Dědič, V.; Bábor, P., 2019: Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy. JOURNAL OF ALLOYS AND COMPOUNDS 789, p. 607 - 612, doi: 10.1016/j.jallcom.2019.02.305 (DEKTAK, SIMS)
DRDLÍK, D.; ROLEČEK, J.; DRDLÍKOVÁ, K.; SALAMON, D., 2018: Restraining of calcium contamination in near-net shape alumina ceramics during slip casting. INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY 15 (6), p. 1559 - 8, doi: 10.1111/ijac.13042 (LYRA, SIMS)
JIANG, L.; XIAO, N.; WANG, B.; GRUSTAN-GUTIERREZ, E.; JING, X.; BÁBOR, P.; KOLÍBAL, M.; LU, G.; WU, T.; WANG, H.; HUI, F.; SHI, Y.; SONG, B.; XIE, X.; LANZA, M., 2017: High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments. NANO RESEARCH 10 (6), p. 2046 - 10, doi: 10.1007/s12274-016-1393-2 (NANOSAM, SIMS)
Gallery
